Abstract
The effect of temperature-dependent electroluminescence (EL) on nitride-based
light-emitting diodes (LEDs) with different thicknesses of quantum barrier
are studied and demonstrated. It was found that quantum confined stark effect
(QCSE) of 6-nm thick barrier was more slightly than that of 9- and 12-nm thick
barrier. The results indicated that the polarization field is independent
of ambient temperature due to no clearly change of blue-shift value. The results
also pointed out that the polarization field within the active region of 12-nm
thick barrier was stronger than the others due to larger variation of the
wavelength transition position (i.e. blue-shift change to red-shift) from
300 to 350 K, and thus it needed more injection carriers to complete the screening
of QCSE. In this study, we reported a simple method to provide useful comparison
of electrostatic fields within active region in nitride-based LEDs, specifically
for structures consisting of identical active regions with different barrier
thicknesses.
© 2012 IEEE
PDF Article
More Like This
Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells
Liyuan Peng, Degang Zhao, Desheng Jiang, Jianjun Zhu, Zongshun Liu, Ping Chen, Jing Yang, Wei Liu, Feng Liang, Yao Xing, Shuangtao Liu, Liqun Zhang, Wenjie Wang, Mo Li, Yuantao Zhang, and Guotong Du
Opt. Express 26(17) 21736-21744 (2018)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription