Abstract
In this paper, a new photo device are proposed using
gap-typed hydrogenated amorphous silicon (a-Si:H)
thin-film transistors (TFTs) as backlight sensing
circuits. The system employs gap type a-Si TFTs, which
has higher photo sensitivity, to sense illumination and
increase device dynamic range. Meanwhile, the system
with local dimming technologies could attain the purpose
for self-adjusting function. It is expected that the
integration of this sensing system onto the panel can be
implemented without extra process development.
Furthermore, the photo leakage characteristics of a-Si
TFTs after optical stress are investigated and the
corresponding calibration method is proposed to reduce
the error in sensing the illumination intensity. This
approach would provide the possibility for the sensors
array to be integrated into the pixel with the same a-Si
TFT device.
© 2011 IEEE
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