Abstract
The change in electrical characteristics of a-Si:H
thin-film transistors (TFTs) was determined in the presence of
electrical gate bias stress, gamma radiation, and both
simultaneously, simulating the harsh environment of space.
Multiple TFTs were tested under each condition, and the
current–voltage characteristics were measured. The results show
the gate bias stress increasing the threshold voltage (<i>V<sub>t</sub></i>)
with power law time dependence while the gamma irradiation
decreases threshold voltage for all working transistors. When
both the irradiation and gate bias stress were applied
simultaneously, the <i>V<sub>t</sub></i> initially increased with electrical
stress and then decreased as the gamma radiation dominated.
Changes in effective mobility were also extracted and detailed
analysis of the current-voltage characteristics indicated that
the gamma radiation creates interface traps and electron-hole
pairs whereas the gate stress produces defect states in the
amorphous silicon.
© 2011 IEEE
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