Abstract
For thin-film transistor liquid crystal display (TFT-LCD)
panel manufacturing, a gate driver circuit with amorphous
silicon TFT plays an important role. In this paper, an amorphous
silicon gate (ASG) driver circuit is optimized to improve
circuit's dynamic characteristics. The adopted simulation-based
evolutionary method integrates genetic algorithm and circuit
simulator on the unified optimization framework. The circuit
consisting of 14 hydrogenated amorphous silicon TFTs (a-Si:H
TFTs) used in a large panel is optimized for the given
specifications of the rise time <1.5 μs, the fall time
<1.5 μs, and the ripple voltage <3 V with
minimizing the total layout area. By optimizing the width and
passive components of the 14 devices, the results of this study
successfully meet the desired specifications, where the
sensitivity analysis is further conducted to verify the
characteristic variation with respect to the optimized
parameters. To validate the results, the optimized circuit is
fabricated with 4-μm a-Si:H TFT process, and the experimental
result confirms the practicability of achieved design. The
ripple voltage within 2.0 V is successfully obtained while the
rise and fall times satisfy the required specifications for the
fabricated sample. A 35% reduction of the optimized total
devices width of a-Si:H TFTs is achieved.
© 2011 IEEE
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