Abstract
Based on the use of a standard five-mask process, this
work presents a new integrated hydrogenated amorphous silicon
thin-film transistor (a-Si:H TFT) gate driver circuit for large size
TFT-LCD applications, composed of a pull-up circuit with three
TFTs, a pull-down circuit with ten TFTs, and two capacitors. The
pull-up circuit, which separates the row line from the carry signal,
prevents distortion of the output pulse. Moreover, the pull-down
circuit with the AC-driving method can reduce the threshold
voltage shift ( V<sub>TH</sub> shift) to stabilize the output voltage and suppress
the fluctuation of the row line, subsequently increasing the
operating lifetime. According to accelerated lifetime test results,
this gate driver circuit operates stably over 240 hours at 100 °C.
Additionally, the scan direction of the proposed circuit can be
modified using two control signals and applied to the reversal
display of an image.
© 2011 IEEE
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