Abstract
A thin-film monocrystalline CMOS display technology has been realized by
implementing a conventional NMOS inversion device and a PMOS accumulation
device or PACC. In this paper, a charge-based model is introduced which
provides the dc current-voltage characteristics of PACC devices. Derived
directly from the Pao–Sah equation by applying the 1D Gauss' law,
the model provides a ${\rm C}-\infty$ expression for drain current valid from cutoff through
accumulation. The model correctly predicts the influence of fixed charge at
the silicon–glass interface on the I–V characteristics and shows
excellent agreement for both transfer and output characteristics with
results from 2D device simulation. The core model coupled with previously
developed equations describing channel length modulation, subthreshold slope
degradation, drain induced barrier lowering, and mobility degradation form a
complete PACC model which is compared to measured results.
© 2010 IEEE
PDF Article
More Like This
Design, fabrication and optical characterization of photonic crystal assisted thin film monocrystalline-silicon solar cells
Xianqin Meng, Valérie Depauw, Guillaume Gomard, Ounsi El Daif, Christos Trompoukis, Emmanuel Drouard, Cécile Jamois, Alain Fave, Frédéric Dross, Ivan Gordon, and Christian Seassal
Opt. Express 20(S4) A465-A475 (2012)
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription