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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 5,
  • Issue 12,
  • pp. 438-445
  • (2009)

An Amorphous Indium–Gallium–Zinc–Oxide Active Matrix Electroluminescent Pixel

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Abstract

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.

© 2009 IEEE

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