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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 3,
  • Issue 1,
  • pp. 45-51
  • (2007)

Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization

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Abstract

Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones.

© 2007 IEEE

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