Abstract
Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation
were investigated in this study. The electrical characteristics and reliability
of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization
(SPC) and excimer laser crystallization
(ELC) methods respectively. The
thermal annealing causes F-ions to pile up at the poly-Si interface, without
the initial pad oxide deposition. With the introduction of fluorine in poly-Si
film, the trap state density was effectively reduced. Also, the presence of
strong Si-F bonds enhances electrical endurance against hot carrier impact
by using F-ions-implantation. These improvements in electrical characteristics
are even obvious for the ELC poly-Si TFTs compared to the SPC ones.
© 2007 IEEE
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