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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 12,
  • Issue 7,
  • pp. 736-741
  • (2016)

Study of Low-Efficiency Droop in Semipolar ( $20\bar{2}\bar{1}$ ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence

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Abstract

The superior low-efficiency droop performance of semipolar ( $20\bar{2}\bar{1}$ ) InGaN light-emitting diodes (LEDs) makes it a hot candidate for efficient solid-state lighting and full-color displays. To unveil the mystery of this low droop and high efficiency, the emission dynamics of semipolar ( $20\bar{2}\bar{1}$ ) LEDs is investigated by time-resolved and steady-state photoluminescence (PL) measurements. Much smaller carrier lifetimes (radiative and nonradiative lifetime) were obtained from semipolar ( $20\bar{2}\bar{1}$ ) InGaN QWs compared with those on the $c$ -plane samples, possibly due to the reduced quantum-confined Stark effects and smaller indium fluctuation on semipolar InGaN samples. The experimental findings indicate a much reduced excess carrier density in semipolar ( $20\bar{2}\bar{1}$ ) InGaN LEDs, which will impact the device performance. Based on this, a modified ABC equation with weak phase-space-filling (PSF) effect was used to model the droop characteristics of semipolar ( $20\bar{2}\bar{1}$ ) LEDs.

© 2016 IEEE

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