Abstract
In this work, we report on the fabrication of
flexible field emission (FE) devices based on BaO nanostructures synthesized
by a chemical bath deposition method. The morphology and composition
of BaO nanowires were characterized by FE scanning electron microscopy,
high resolution transmission electron microscopy, selected area electron
diffraction, X-ray diffraction, and energy dispersive X-ray spectrometer.
The results confirmed that BaO nanowires with single crystalline cubic
structures grew along the [111] direction. The flexible field emitters
fabricated using the BaO nanowires on stainless-steel cylinder substrates
show superior FE properties, which exhibited a low turn-on field (
${\sim}{{1.24}}\ {{V}}/\mu{{m}}$
), a low threshold field (
${\sim}{{3.18}}\ {{V}}/\mu{{m}}$
), and a high field enhancement factor
$(\beta = 2458)$
. Moreover, the flexible FE devices based on BaO nanowire
emitters displayed uniform and bright emission patterns under bending
conditions. No obvious degradation of current density was observed
during the stability tests. As a result, it is demonstrated that such
BaO nanowires are promising for the application in practical flexible
FE devices.
© 2015 IEEE
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