Abstract
Dual-color InGaN/GaN pyramidal micro light-emitting
diode (
$\mu$
-LED) was directly grown on SiO
$_{{{2}}}$
masked Si substrate
via selective area growth technology. An electrically driven dual-color
$\mu$
-LED
with typical rectifying behavior and a turn-on voltage of about 3
V was demonstrated. Two emission peaks locating at 440 and 490 nm
were observed by micro-photoluminescence. Using catholuminescence
measurement, it was found that the blue emission originated from the
apex of micro pyramid top, and green emission was mainly from the
lower part of side facets. By controlling the injection current, electroluminescence
emission color of the
$\mu$
-LED can be tuned continuously from green to
blue range.
© 2015 IEEE
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