Abstract
In this study, the time response behavior of the amorphous indium-gallium
zinc-oxide (a-IGZO) thin-film transistors (TFTs) to the illumination
pulse is analyzed. We modified the previously proposed fitting formula
by changing the fitting parameters from constant to time dependent.
The mechanism for the response behaviors is proposed based on the
analysis of the fitting parameters with respect to measurement time
and under different light intensities. The single-pulse measurement
results and their corresponding fitting parameters is used as the
database to predict the current behaviors of the TFTs under multi-pulse
illumination. The predicted and measured results fit fairly well.
The method to formulize the time response for the a-IGZO TFT under
varying situations of illumination is thus developed, which can be
important in the design and simulation of transparent electronic circuits.
© 2015 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription