Abstract
We studied, by 2D numerical simulations, the effects
of poor semiconductor morphology near the source and drain contacts
of BGBC-OTFTs. The variations of the electrical characteristics and
of the path of the injected carriers in the transistor channel have
been analyzed considering different defective regions, parameters
(mobility, density of states) and contact thicknesses. The results
showed that 100 nm wide defective regions can induce high contact
resistance, resulting in large variation in the electrical characteristics.
However, the typical S-shape in the low-Vds output characteristics
is clearly observed only considering a combination of highly defected
regions and Schottky barrier at the contacts. Furthermore, the simulations
showed that most of the current is injected and extracted, at the
source and drain contact, within a few nanometers from the semiconductor-dielectric
interface. This explains the small influence of the contact thickness
on the simulated electrical characteristics, at least for a contact
thickness down to 10 nm.
© 2015 IEEE
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