Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Journal of Display Technology
  • Vol. 12,
  • Issue 3,
  • pp. 252-257
  • (2016)

The Role of Defective Regions Near the Contacts on the Electrical Characteristics of Bottom-Gate Bottom-Contact Organic TFTs

Not Accessible

Your library or personal account may give you access

Abstract

We studied, by 2D numerical simulations, the effects of poor semiconductor morphology near the source and drain contacts of BGBC-OTFTs. The variations of the electrical characteristics and of the path of the injected carriers in the transistor channel have been analyzed considering different defective regions, parameters (mobility, density of states) and contact thicknesses. The results showed that 100 nm wide defective regions can induce high contact resistance, resulting in large variation in the electrical characteristics. However, the typical S-shape in the low-Vds output characteristics is clearly observed only considering a combination of highly defected regions and Schottky barrier at the contacts. Furthermore, the simulations showed that most of the current is injected and extracted, at the source and drain contact, within a few nanometers from the semiconductor-dielectric interface. This explains the small influence of the contact thickness on the simulated electrical characteristics, at least for a contact thickness down to 10 nm.

© 2015 IEEE

PDF Article
More Like This
Effects of source/drain electrode contact length on the photoresponsive properties of organic field-effect transistors

Sunan Xu, Hongquan Xia, Fangzhi Guo, Yuhuan Yang, Yingquan Peng, Wenli Lv, Xiao Luo, Ying Wang, Zouyu Yang, and Lei Sun
Opt. Mater. Express 8(4) 901-908 (2018)

Channel-length-dependent performance of photosensitive organic field-effect transistors

Yingquan Peng, Fangzhi Guo, Hongquan Xia, Wenli Lv, Lei Sun, Sunan Xu, Huabiao Zhu, Xinda Chen, Chen Liu, Ying Wang, and Feiping Lu
Appl. Opt. 58(6) 1319-1326 (2019)

Construction and electrical performance improvement of MoS2 FET with graphene/metal contact

Tao Han, Hongxia Liu, Shupeng Chen, Shulong Wang, and Kun Yang
Opt. Mater. Express 11(9) 3099-3110 (2021)

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved