Abstract
Light emission has been observed from silicon
devices in the reverse avalanche mode is reported. A Si-PMOSFET LED
is manufactured in a standard 3-
$\mu{{m}}$
CMOS technology, with
no changes to the process, is described. Under the breakdown condition,
the reverse-biased junction configuration of the silicon light-emitting
device emit light in a broad spectrum from 450 to 800 nm with characteristic
peaks around
${\sim}$
650 nm. The photon emission energy spectrum is compared
to the hot electron energy distribution . Further, it successfully demonstrates the possibility
of quantifying the optical performance in an integrated micro-display
array consisting of five in-parallel connected PMOSFETs based on the
silicon light source, thus providing high functional diversification
of CMOS integrated circuits with high-frequency capability of the
order of GHz. The demonstration of such a LED that can be easily integrated
into CMOS fabrication process is an important step toward optical interconnects.
© 2015 IEEE
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