Abstract

Light emission has been observed from silicon devices in the reverse avalanche mode is reported. A Si-PMOSFET LED is manufactured in a standard 3- $\mu{{m}}$ CMOS technology, with no changes to the process, is described. Under the breakdown condition, the reverse-biased junction configuration of the silicon light-emitting device emit light in a broad spectrum from 450 to 800 nm with characteristic peaks around ${\sim}$ 650 nm. The photon emission energy spectrum is compared to the hot electron energy distribution . Further, it successfully demonstrates the possibility of quantifying the optical performance in an integrated micro-display array consisting of five in-parallel connected PMOSFETs based on the silicon light source, thus providing high functional diversification of CMOS integrated circuits with high-frequency capability of the order of GHz. The demonstration of such a LED that can be easily integrated into CMOS fabrication process is an important step toward optical interconnects.

© 2015 IEEE

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Cited By

You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription