Abstract
In this work, the aluminum-induced crystallization of hydrogenated
amorphous silicon (a-Si:H) has been investigated. Specifically, constant
temperature and voltage were applied on a-Si:H films covered with
a very thin layer of pure aluminum. Each sample was subjected to annealing
for 15 minutes while connected to an external electrical power. Nine
different treatments of annealing temperatures and voltages were included
in this study. The levels of applied voltages were 0 V, 2 V, or 20
V, and the levels of annealing temperatures were 200
$^{\circ}{{C}}$
, 250
$^{\circ}{{C}}$
, and 300
$^{\circ}{{C}}$
. The electrical, morphological, and structural properties
of the treated a-Si:H layer were studied. The results of energy dispersive
X-ray spectroscopy showed a diffusion of aluminum atoms inside the
a-Si:H layer. While, X-ray diffraction revealed that the crystallization
depends on both the annealing temperature and the external voltage.
Moreover, the obtained results showed that the electrical resistivity
decreases considerably, the carrier concentration deceases slowly,
while the Hall mobility increases sharply with increasing the annealing
temperature and the applied voltage.
© 2015 IEEE
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