Abstract

Inkjet-printed oxide thin-film transistors (TFTs) with a double-active layer structure were prepared to achieve better electrical properties and bias stability. The active layer was composed of an inkjet-printed ${In}_{2} {O} _{3}$ layer on top of an inkjet-printed zinc–tin oxide with various ${In}_{2} {O} _{3}$ ratios. The best electrical properties of the inkjet-printed double-active layer ZTO TFTs were obtained with 0.01 M of ${In}_{2} {O} _{3}$ : a mobility of 8.6 ${cm}^{2} /{V}~ {s}$ , a threshold voltage of 2.76 V, a subthreshold slope of 0.52 V/dec, and an on-to-off ${current~ratio}> {{10}} ^{6}$ . The electrical properties of the inkjet-printed double-active layer oxide TFTs were superior to those of the single-active layered TFTs.

© 2015 IEEE

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