Abstract
Effect of the oxygen flow rate for active-layer deposition on
the thermal stability of amorphous InGaZnO thin film transistors (a-IGZO
TFTs) was investigated. The transfer characteristics of a-IGZO TFTs
were measured at temperatures ranging from 298 to 398 K and a simple
analytical model was used to relate the threshold voltage
$({\rm V}_{\rm th})$
decrease with increasing temperature to the formation of
the point defects in a-IGZO films. Lower oxygen flow rate for active-layer
deposition was proved to improve the thermal stability of a-IGZO TFTs,
as was confirmed to be due to the increase in defect formation energy
with the oxygen flow rate decreasing by the related theoretical analysis
and XPS measurements.
© 2015 IEEE
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