Abstract

In this study, we propose an amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) based on homojunctioned structure and investigate the modification of source/drain (SD) region effect on device performance. It is shown that conductive characteristic of the SD contact fabricated by self-aligning through bask-side exposure does rest upon the following passivation deposition procedure. By optimizing the passivation architecture through plasma-enhanced chemical vapor deposition (PECVD), TFT panel with homojunctioned structure possesses excellent uniformity, negligible short-channel effect, and outstanding stability against environmental storage and thermal/light electrical stress. Owning to its easy fabrication and prominent performance, we firmly believe in the competitiveness of homojunctioned TFT in the future matrix backplanes.

© 2015 IEEE

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