Abstract
In this paper, we present a consistent model to
analyze the drain current mismatch of organic thin-film transistors.
The model takes charge fluctuations and edge effects into account,
to predict the fluctuations of drain currents. A Poisson distribution
for the number of charge carriers is assumed to represent the random
distribution of charge carriers in the channel. The edge effects due
to geometric variations in fabrication processes are interpreted in
terms of the fluctuations of channel length and width. The simulation
results are corroborated by experimental results taken from over 80
organic transistors on a flexible plastic substrate.
© 2015 IEEE
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