Abstract
Transparent amorphous oxide semiconductors (TAOSs), such as
In–Ga–Zn–O (a-IGZO), are the subject of intensive
experimental and theoretical research aimed at applications in transparent
electronics. With the development of novel device applications came
an increased demand for the understanding and control of a-IGZO Schottky
contact properties. Rectifying contacts are suitable for the development
of Schottky diodes and metal–semiconductor field-effect transistors
(MESFETs) for fast and low power consumption integrated circuits and
active-matrix displays. We propose fabrication of Schottky barrier
to a-IGZO based on transparent conductive oxide (TCO), namely Ru–Si–O.
We have found that atomic composition and microstructure of this TCO
are effective in preventing interfacial reactions in the contact region
which allows to avoid pre-treatment of the semiconductor surface.
Ru–Si–O Schottky contacts to a-IGZO have been fabricated
by means of reactive sputter-deposition. We provide comprehensive
results on effects of Ru–Si–O chemical composition on
properties of rectifying contacts to a-IGZO. Depending on oxygen content
in Ru–Si–O sputtering atmosphere, for a specific process
window (from 10% to 20% of
${{O}}_{2}$
in sputtering atmosphere),
highly rectifying transparent Schottky barriers are obtained without
additional a-IGZO surface treatment.
© 2014 IEEE
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