Abstract
This paper reports an InGaZnO thin-film transistor involving
a wide bandgap gate dielectric of
${{ZrO}}_{2}$
and IGZO/
${{TiO}} _{x}$
channel stack. According to our experimental results, the
IGZO TFT with a thin
${{TiO}}
_{x}$
channel capping layer shows good device integrity
of a low threshold voltage of 0.37 V, a small sub-threshold swing
of 77 mV/decade, and a high mobility of 33
${{cm}}^{2} /{{V}}{\cdot}{{s}}$
under a low drive voltage of
$< {{2}}~{{V}}$
.
We also demonstrate that the significantly improved electrical property
is mainly contributed by the enhanced channel electric field after
${{TiO}} _{x}$
capping, associated
with maximizing charge accumulated capability. The favorable high-temperature
transfer characteristics are also obtained in IGZO/
${{TiO}} _{x}$
TFT, indicating a weak Fermi-level pinning in IGZO/
${{TiO}} _{x}$
channel structure. With the operating temperature increasing
further, the thermal activated effect shall dominate IGZO channel
property beyond percolation conduction.
© 2014 IEEE
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