Abstract
This paper reports an InGaZnO thin-film transistor with titanium-oxide
semiconductor as channel capping layer. Based on the experimental
results, the titanium-oxide semiconductor has the function of not
only a surface passivation layer to reduce the defect states localized
at grain boundaries near source/drain contacts, but also a mobility
booster to enhance electric field across channel. Compared to control
IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor
exhibits an improved performance of a low drive voltage of
${<}{{5 V}}$
, a low threshold voltage of 1.9 V, a low sub-threshold
swing of 244 mV/decade , and
a high mobility of 13.7 cm
$^{2}{{/V}}\cdot{{s}}$
. The
simple titanium-oxide capping process have been demonstrated in this
work, which provides considerable potential for further display applications
requiring a low power operation and a low-temperature fabrication.
© 2014 IEEE
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