Abstract
Electrically driven single-pyramid InGaN/GaN micro light-emitting
diode (
$\mu$
-LED) on silicon substrate has been fabricated and investigated.
The
$\mu$
-LED exhibits a typical p-n diode behavior with a turn-on
voltage of 2.5 V and realizes an efficient electroluminescence (EL)
under an ultra-small injection current (3
$\mu$
A). An excellent EL pattern
with a high-brightness spot at apex, a hexagonal blue ring around
the base of pyramid, and six bright spots at the corners of pyramid
base was observed. EL wavelength centered at about 450 nm, and a slight
peak shift was found as the injection current increased from 100 to
1000
$\mu$
A. The small magnitude of spectral shift is attributed to
the growth of multiple quantum wells on semi-polar GaN pyramid side
facets and its accompanied reduction of the quantum-confined Stark
effect. The
$\mu$
-LED has the promising potential for applying in micro display
and electrically driven single photon emitter.
© 2014 IEEE
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