Abstract
In this paper, we developed high-
$\kappa$
${Yb}_{2}{O}_{3}$
and
${YbTi}_{\rm
x}{O}_{\rm y}$
gate dielectrics for an amorphous
indium-gallium-zinc oxide (
$\alpha$
-IGZO) thin-film transistor
(TFT) applications. Compared with the
${Yb}_{2}{O}_{3}$
dielectric,
the
$\alpha$
-IGZO TFT using the high-
$\kappa$
${YbTi}_{\rm x}{O}_{\rm y}$
gate dielectric exhibited better electrical characteristics,
such as a high
${\rm
I}_{\rm on}/{\rm I}_{\rm off}$
ratio of
$4.5\times 10^{7}$
, a high field-effect mobility of
$26.1\ {cm}^{2}/{V-s}$
, a low threshold voltage of 0.53 V, and a low subthreshold
swing of 210 mV/decade. These results are probably due to the incorporation
of Ti into the
${Yb}_{2}{O}_{3}$
film, resulting in the formation of smooth surface and
low density of interface states at the oxide/channel interface. Furthermore,
the stability of high-
$\kappa$
${Yb}_{2}{O}_{3}$
and
${YbTi}_{x}{O}_{y}$
$a$
-IGZO TFTs was investigated under both positive bias stress
and negative bias stress conditions.
© 2014 IEEE
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