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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 11,
  • Issue 3,
  • pp. 248-254
  • (2015)

Structural and Electrical Characteristics of ${Yb}_{2}{O}_{3}$ and ${YbTi}_{\rm x}{O}_{\rm y}$ Gate Dielectrics for $\alpha$ -InGaZnO Thin-Film Transistors

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Abstract

In this paper, we developed high- $\kappa$ ${Yb}_{2}{O}_{3}$ and ${YbTi}_{\rm x}{O}_{\rm y}$ gate dielectrics for an amorphous indium-gallium-zinc oxide ( $\alpha$ -IGZO) thin-film transistor (TFT) applications. Compared with the ${Yb}_{2}{O}_{3}$ dielectric, the $\alpha$ -IGZO TFT using the high- $\kappa$ ${YbTi}_{\rm x}{O}_{\rm y}$ gate dielectric exhibited better electrical characteristics, such as a high ${\rm I}_{\rm on}/{\rm I}_{\rm off}$ ratio of $4.5\times 10^{7}$ , a high field-effect mobility of $26.1\ {cm}^{2}/{V-s}$ , a low threshold voltage of 0.53 V, and a low subthreshold swing of 210 mV/decade. These results are probably due to the incorporation of Ti into the ${Yb}_{2}{O}_{3}$ film, resulting in the formation of smooth surface and low density of interface states at the oxide/channel interface. Furthermore, the stability of high- $\kappa$ ${Yb}_{2}{O}_{3}$ and ${YbTi}_{x}{O}_{y}$ $a$ -IGZO TFTs was investigated under both positive bias stress and negative bias stress conditions.

© 2014 IEEE

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