Abstract

In this study, three different partial radiant flux testing methods including the large-area silicon (Si) photodiode method, the assembling Si photodiodes box method, and the integrating sphere method were used to measure the optical power of UV-LED die. The optical simulations and the experiments have been performed to study the influence of the varying LED die position and tilt angle. The optical simulations based on the real measurement geometries were used to confirm the gathering hitting optical power on Si photodiode through different methods. The simulation and measurement results in this study can be used as the future reference of different partial LED flux testing methods to measure the large number of UV-LED dies.

© 2015 IEEE

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