Abstract
The mesa size effect on light extraction efficiency (LEE) of
light-emitting diodes (LEDs) was studied in this work. The mesa area
size of three kinds of LEDs that were evaluated include:
${{350}}\times{{950}}~\mu{{m}}^{2}$
(small-size embedded electrodes: GaN LED, S-LED),
${{500}}\times{{950}}~\mu{{m}}^{2}$
(medium-size embedded electrodes: GaN LED, M-LED),
${{950}}\times{{950}}~\mu{{m}}^{2}$
(large-size embedded electrodes : GaN LED, L-LED). This paper not only discusses LEE,
but current density and heat dissipation performance as well. The
output power and light extraction efficiency at
${{700}}~{{mA/mm}}^{2}$
for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and
38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE
of S-LED is due to the electron-hole recombination rate increasing.
This phenomenon is caused by the greatest current spread and heat
dissipation potential.
© 2015 IEEE
PDF Article
More Like This
Cited By
You do not have subscription access to this journal. Cited by links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.
Contact your librarian or system administrator
or
Login to access Optica Member Subscription
Add to BibSonomy