Abstract

The mesa size effect on light extraction efficiency (LEE) of light-emitting diodes (LEDs) was studied in this work. The mesa area size of three kinds of LEDs that were evaluated include: ${{350}}\times{{950}}~\mu{{m}}^{2}$ (small-size embedded electrodes: GaN LED, S-LED), ${{500}}\times{{950}}~\mu{{m}}^{2}$ (medium-size embedded electrodes: GaN LED, M-LED), ${{950}}\times{{950}}~\mu{{m}}^{2}$ (large-size embedded electrodes : GaN LED, L-LED). This paper not only discusses LEE, but current density and heat dissipation performance as well. The output power and light extraction efficiency at ${{700}}~{{mA/mm}}^{2}$ for S-LED, M-LED, and L-LED are 555, 485, and 432 mW and 38.1%, 33.4%, and 29.7%, respectively. The best output power and LEE of S-LED is due to the electron-hole recombination rate increasing. This phenomenon is caused by the greatest current spread and heat dissipation potential.

© 2015 IEEE

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