Abstract
The effects of ultraviolet (UV)-ozone treatment on solution-processed
amorphous InGaZnO (IGZO) thin-film transistors
(TFTs) grown using the sol-gel method are investigated. The UV-ozone-treated
TFT devices showed an improved field-effect mobility of 1.52
${{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$
and a subthreshold slope (S) of 0.42 V/dec compared to those of
IGZO TFT devices with only thermal annealing (0.75
${{cm}}^{2}\cdot{{V}}^{-1}\cdot{{s}}^{-1}$
and 0.84 V/dec, respectively). The enhancement of the UV-ozone-treated
TFTs is mostly attributed to the increased film packing density, higher Al
S/D electrodes adhesion properties, reduced oxygen-related defects, and less
electron trapping of the IGZO thin films, which improved the TFT performance
and bias stress stability.
© 2014 IEEE
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