Abstract
In this paper, crack-free InGaN/GaN multiple quantum wells (MQWs) light-emitting
diodes (LEDs) were transferred from Si (111) substrate onto the electroplating
Cu submount, with inserting a 5-pair TiO
$_{2}$
/SiO
$_{2}$
omnidirectional reflector (ODR) and
an Al mirror, defined as TiO
$_{2}$
/SiO
$_{2}$
–Al ODR. The reflectivity in the blue spectral range of the
TiO
$_{2}$
/SiO
$_{2}$
–Al ODR
was as high as 97%. The current–voltage (I–V) characteristics
showed no obvious degradation of electrical properties for the ODR-based LED
on Cu. In comparison to conventional LEDs on Si without ODRs, the light output
of ODR-based LEDs on Cu was enhanced by 59.3% at a driving current of 350
mA. The improvement is mainly attributed to the following factors: the removal
of the opaque Si substrate, the inserting of the high-reflectivity TiO
$_{2}$
/SiO
$_{2}$
–Al ODR,
and the transfer onto the Cu submount with better thermal conductivity.
© 2014 IEEE
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