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Optica Publishing Group
  • Journal of Display Technology
  • Vol. 10,
  • Issue 11,
  • pp. 950-955
  • (2014)

Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips

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Abstract

Grain growth from molten silicon during micro-thermal-plasma-jet ( $\mu$ -TPJ) irradiation has been controlled by applying amorphous-silicon (a-Si) strips. The grain boundaries (GBs) in strip pattern with the width of ${{1}}~\mu{{m}}$ are significantly reduced compared with the case without strip pattern. In strip pattern, random GBs were almost excluded and most of the strips consist of $\sum 3$ coincidence site lattices (CSLs) GBs or in some cases single grains. TFTs with strip pattern showed threshold voltage $({V}_{\rm th})$ , field effect mobility $(\mu_{\rm FE})$ and sub-threshold swing value (S) of ${{1.8}} \pm {{0.10}}~{{V}}$ , ${{303}} \pm {{24}}~{{cm}}^{2}/{{V}}\cdot{{s}}$ and ${{240}}\pm {{17}}~{{mV/dec}}$ , respectively. In the case of P-type TFTs, they were $-{{1.8}}\pm {{0.22}}~{{V}}$ , ${{98}}\pm {{7}}~{{cm}}^{2}/{{V}}\cdot{{s}}$ , ${{285}} \pm {{17}}~{{mV/dec}}$ , respectively. TFTs fabricated with the proposed pattern showed high performance and the variability reduced to $1/3$ compared with the case without strip pattern. These characteristics and small variation with proposed patterns enabled us to operate CMOS circuits. The 8-bits shift register fabricated with proposed pattern was operated at a supply voltage of 5 V clock frequency of 4 MHz.

© 2014 IEEE

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