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Optica Publishing Group
  • Journal of the Optical Society of Korea
  • Vol. 17,
  • Issue 1,
  • pp. 73-80
  • (2013)

Detection System for Sub-micrometer Defects of a Photo-mask Using On-axis Interference between Reflected and Scattered Lights

Open Access Open Access

Abstract

In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 <i>μ</i>m diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.

© 2013 Optical Society of Korea

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