Abstract

The influence of high-power laser diode (HPLD) emitter width on the device performance is investigated for 975-nm (In,Ga)(As,P)/(Al,Ga)As broad-area HPLDs, using self-consistent electro-thermal-optical simulation. To guarantee the simulation’s accuracy, simulated results are matched with the measured results for a sample HPLD with fitting parameters. The influences of HPLD emitter width on temperature distribution, output power, and the beam product parameter (BPP) are analyzed for three different emitter widths of 50, 70, and 90 µm. It is found that a device with smaller emitter width exhibits both thermal rollover and thermal blooming at lower output power, but smaller BPP.

© 2019 Optical Society of Korea

High-power narrow spectral width 975 nm semiconductor laser with high process compatibility achieved by high-order gratings

Zhenwu Liu, Li Zhong, Wei Li, Suping Liu, and Xiaoyu Ma
Opt. Lett. 48(23) 6283-6286 (2023)

Effect of Ga_1−xInxAs_1−yPy Al-free asymmetric barrier on GaAs-based 808-nm laser diode

Zhang Xu, Hailiang Dong, Jia Zhi Gang, Zhang Ai Qin, Liang Jian, Wang Zhi Yong, and Xu Bing She
Opt. Lett. 47(5) 1153-1156 (2022)

1240nm high-power GaInNAs laser diodes

D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel
Opt. Express 15(23) 15187-15192 (2007)

Room-temperature yellow-orange (In,Ga,Al)P–GaP laser diodes grown on (n11) GaAs substrates

N. N. Ledentsov, V. A. Shchukin, Yu. M. Shernyakov, M. M. Kulagina, A. S. Payusov, N. Yu. Gordeev, M. V. Maximov, A. E. Zhukov, T. Denneulin, and N. Cherkashin
Opt. Express 26(11) 13985-13994 (2018)

Tunable 975  nm nanosecond diode-laser-based master-oscillator power-amplifier system with 16.3  W peak power and narrow spectral linewidth below 10  pm

Thi Nghiem Vu, Andreas Klehr, Bernd Sumpf, Hans Wenzel, Götz Erbert, and Günther Tränkle
Opt. Lett. 39(17) 5138-5141 (2014)