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Optica Publishing Group
  • Chinese Optics Letters
  • Vol. 16,
  • Issue 1,
  • pp. 011404-
  • (2018)

Stress damage process of silicon wafer under millisecond laser irradiation

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Abstract

The stress damage process of a single crystal silicon wafer under millisecond laser irradiation is studied by experiments and numerical simulations. The formation process of low-quality surface is monitored in real-time. Stress damage can be observed both in laser-on and -off periods. Plastic deformation is responsible for the first stress damage in the laser-on period. The second stress damage in the laser-off period is a combination of plastic deformation and fracture, where the fundamental cause lies in the residual molten silicon in the ablation hole.

© 2018 Chinese Laser Press

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