Emerging material systems for integrated optical Kerr frequency combs

Andre Kovach; Dongyu Chen; Jinghan He; Hyungwoo Choi; Adil Han Dogan; Mohammadreza Ghasemkhani; Hossein Taheri; Andrea M. Armani

doi:10.1364/AOP.376924

Advances in Optics and Photonics
Vol. 12,
Issue 1,
pp. 135-222
(2020)
•https://doi.org/10.1364/AOP.376924

Emerging material systems for integrated optical Kerr frequency combs

Andre Kovach, Dongyu Chen, Jinghan He, Hyungwoo Choi, Adil Han Dogan, Mohammadreza Ghasemkhani, Hossein Taheri, and Andrea M. Armani

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Andre Kovach, Dongyu Chen, Jinghan He, Hyungwoo Choi, Adil Han Dogan, Mohammadreza Ghasemkhani, Hossein Taheri, and Andrea M. Armani, "Emerging material systems for integrated optical Kerr frequency combs," Adv. Opt. Photon. 12, 135-222 (2020)

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- Nonlinear Optics
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About this Article
History
- Original Manuscript: September 3, 2019
- Revised Manuscript: December 6, 2019
- Manuscript Accepted: December 24, 2019
- Published: March 9, 2020

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Abstract

The experimental realization of a Kerr frequency comb represented the convergence of research in materials, physics, and engineering. This symbiotic relationship continues to underpin efforts in comb innovation today. While the initial focus developing cavity-based frequency combs relied on existing microresonator architectures and classic optical materials, in recent years, this trend has been disrupted. This paper reviews the latest achievements in frequency comb generation using resonant cavities, placing them within the broader historical context of the field. After presenting well-established material systems and device designs, the emerging materials and device architectures are examined. Specifically, the unconventional material systems as well as atypical device designs that have enabled tailored dispersion profiles and improved comb performance are compared to the current state of art. The remaining challenges and outlook for the field of cavity-based frequency combs are evaluated.

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Material	Major Diameter (µm)	Minor Diameter ( $W i d t h \times H e i g h t$ ) (µm)	Core Index	Cladding Index	$Q$ ( $\times 10^{6}$ )	$n_{2}$ ( $\times 10^{- 20} m^{2} / W$ )	$P_{c i r c} (W)$ ^b^,^c^,^d
${M g F}_{2}$ [282]	3800	120	1.37	1	200	0.7–0.9	3
${C a F}_{2}$ [40]	5000	200	1.43	1	6000	1.2	66
${B a F}_{2}$ [334]	1680	150	1.47	1	500	2.85	16
${S r F}_{2}$ [332]	10600	920	1.43	1	1000	1.76	5
Silica	–	–	1.45	1	–	3	–
Toroid [313]	75	$\sim 4$	–	–	100	–	77
Wedge [320]	3000	–	–	–	400	–	7
${S i O}_{x} N_{y}$ [104]	54	5.6	1.50	1	130	unknown	135
${S i O}_{x} C_{y}$ [333,341]	270	$1.45 \times 1.5$	1.7	1.45	1.2	11.5	0.22
${S i}_{3} N_{4}$ [346]	200	$0.725 \times 1.650$	2.0	1.45	3	25	2
Diamond [128]	50	$\sim 0.850 \times 0.750$	2.38	1.45	1	13	1

Material	Major Diameter (µm)	$W i d t h \times H e i g h t$ (µm)	Core Index	Cladding Index	$Q (\times 10^{6})$	$n_{2} (\times 10^{- 20} m^{2} / W)$	$P_{c i r c} (W)$
Silicon [373]	200	$1.400 \times 0.500$	3.47	1.45	0.59	$\sim 100$ at 2.5 mm	0.072
Lithium niobate [10]	160	$1.300 \times 0.600$	2.21	1; 1.45 on substrate	1.1	18	0.280
AlN [370]	120	$3.500 \times 0.650$	2.12	1.45	0.8	23	0.274
GaP [376]	100	$0.500 \times 0.300$	3.05	1.45	0.3	600	0.107
AlGaAs [371]	810^b	$0.320 \times 0.620$	3.33	1.45	0.2	2700	0.023

Material	Major Diameter (µm)	Minor Diameter ( $W i d t h \times H e i g h t$ ) (µm)	Core Index	Cladding Index	$Q$ ( $\times 10^{6}$ )	$n_{2}$ ( $\times 10^{- 20} m^{2} / W$ )	$P_{c i r c} (W)$ ^b^,^c^,^d
${M g F}_{2}$ [282]	3800	120	1.37	1	200	0.7–0.9	3
${C a F}_{2}$ [40]	5000	200	1.43	1	6000	1.2	66
${B a F}_{2}$ [334]	1680	150	1.47	1	500	2.85	16
${S r F}_{2}$ [332]	10600	920	1.43	1	1000	1.76	5
Silica	–	–	1.45	1	–	3	–
Toroid [313]	75	$\sim 4$	–	–	100	–	77
Wedge [320]	3000	–	–	–	400	–	7
${S i O}_{x} N_{y}$ [104]	54	5.6	1.50	1	130	unknown	135
${S i O}_{x} C_{y}$ [333,341]	270	$1.45 \times 1.5$	1.7	1.45	1.2	11.5	0.22
${S i}_{3} N_{4}$ [346]	200	$0.725 \times 1.650$	2.0	1.45	3	25	2
Diamond [128]	50	$\sim 0.850 \times 0.750$	2.38	1.45	1	13	1

Material	Major Diameter (µm)	$W i d t h \times H e i g h t$ (µm)	Core Index	Cladding Index	$Q (\times 10^{6})$	$n_{2} (\times 10^{- 20} m^{2} / W)$	$P_{c i r c} (W)$
Silicon [373]	200	$1.400 \times 0.500$	3.47	1.45	0.59	$\sim 100$ at 2.5 mm	0.072
Lithium niobate [10]	160	$1.300 \times 0.600$	2.21	1; 1.45 on substrate	1.1	18	0.280
AlN [370]	120	$3.500 \times 0.650$	2.12	1.45	0.8	23	0.274
GaP [376]	100	$0.500 \times 0.300$	3.05	1.45	0.3	600	0.107
AlGaAs [371]	810^b	$0.320 \times 0.620$	3.33	1.45	0.2	2700	0.023

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Equations (64)

Advances in Optics and Photonics