Abstract

A correction is given for a figure in [Appl. Opt. 52, 966 (2013) [CrossRef]  ].

© 2015 Optical Society of America

The markers identifying the 1i and 2i layers in Fig. 2 of Ref. [1] were inadvertently interchanged. No results are affected by this error. The corrected figure is presented here.

 

Fig. 2. (Left) Real and (right) imaginary parts of the relative permittivities of all semiconductor layers as functions of the free-space wavelength. All p-type layers are made of a-SiC:H with bandgap Eg=1.94  eV, all n-type layers are of a-Si:H with bandgap Eg=1.8  eV, the top (1i) intrinsic layer is of a-Si1−uGeu:H with bandgap Eg=1.4  eV, the middle (2i) intrinsic layer is of a-Si1−uGeu:H with bandgap Eg=1.6  eV, and the bottom (3i) intrinsic layer is of a-Si:H with bandgap Eg=1.69  eV.

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We thank Mikhail Shuba (Penn State) for alerting us to the error.

Reference

1. M. Solano, M. Faryad, A. S. Hall, T. E. Mallouk, P. B. Monk, and A. Lakhtakia, “Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell backed by a metallic surface-relief grating,” Appl. Opt. 52, 966–979 (2013). [CrossRef]  

References

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  1. M. Solano, M. Faryad, A. S. Hall, T. E. Mallouk, P. B. Monk, and A. Lakhtakia, “Optimization of the absorption efficiency of an amorphous-silicon thin-film tandem solar cell backed by a metallic surface-relief grating,” Appl. Opt. 52, 966–979 (2013).
    [Crossref]

2013 (1)

Faryad, M.

Hall, A. S.

Lakhtakia, A.

Mallouk, T. E.

Monk, P. B.

Solano, M.

Appl. Opt. (1)

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Figures (1)

Fig. 2.
Fig. 2. (Left) Real and (right) imaginary parts of the relative permittivities of all semiconductor layers as functions of the free-space wavelength. All p-type layers are made of a-SiC:H with bandgap E g = 1.94     eV , all n-type layers are of a-Si:H with bandgap E g = 1.8     eV , the top ( 1 i ) intrinsic layer is of a - Si 1 − u Ge u : H with bandgap E g = 1.4     eV , the middle ( 2 i ) intrinsic layer is of a - Si 1 − u Ge u : H with bandgap E g = 1.6     eV , and the bottom ( 3 i ) intrinsic layer is of a-Si:H with bandgap E g = 1.69     eV .

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