Abstract
A Lippmann emulsion memory technique is described for use in a high storage density recording system. Some general considerations of three-dimensional storage techniques are discussed. The parameters and limitations of the Lippmann scheme are discussed and some preliminary experiments are presented. Recording and subsequent readout were obtained for up to ten bits per memory cell in cells whose areas were as small as several hundred square microns. A proposed memory utilizing an array of semiconducting lasing diodes is presented.
© 1968 Optical Society of America
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