Abstract

A fast mask model for extreme ultraviolet (EUV) lithography is vital to process simulation and resolution enhancement techniques. As the target pattern sizes have decreased, the impact of the absorber sidewall angle (SWA) has become a serious problem. In order to model the EUV mask with a slanted absorber sidewall quickly and accurately, a fast mask model based on the absorber sublayer decomposition is proposed. Since the absorber sidewall is slanted but not perpendicular to the multilayer surface, the absorber is decomposed into several thin pattern layers. For each thin layer, the diffraction is calculated by the edge point pulses model. The light propagation between two layers is calculated by spectrum superposition in the frequency domain with Hopkins frequency shift. The fast EUV mask model with slanted absorber sidewall is established by combining the accurate absorber model and the equivalent layer multilayer model. Simulations and comparisons validate the effectiveness of the proposed model. For the 22 nm vertical line-space pattern, the calculation errors of critical dimension via the proposed model are lower than 0.05 nm for different SWA values.

© 2021 Optical Society of America

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