Mid-infrared electro-optic modulator based on a graphene-embedded plasmonic rib waveguide with ultrahigh electro-optic wavelength tuning

Chenyang Hou; Tao Ma; Tao Ma; Jinhui Gao; Jinhui Gao; Heng Liu; Heng Liu; Fang Wang; Fang Wang

doi:10.1364/AO.419388

Applied Optics
Vol. 60,
Issue 10,
pp. 2795-2802
(2021)
•https://doi.org/10.1364/AO.419388

Mid-infrared electro-optic modulator based on a graphene-embedded plasmonic rib waveguide with ultrahigh electro-optic wavelength tuning

Chenyang Hou, Tao Ma, Jinhui Gao, Heng Liu, and Fang Wang

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Chenyang Hou, Tao Ma, Jinhui Gao, Heng Liu, and Fang Wang, "Mid-infrared electro-optic modulator based on a graphene-embedded plasmonic rib waveguide with ultrahigh electro-optic wavelength tuning," Appl. Opt. 60, 2795-2802 (2021)

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- Integrated Optics
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About this Article
History
- Original Manuscript: January 13, 2021
- Revised Manuscript: March 5, 2021
- Manuscript Accepted: March 6, 2021
- Published: March 22, 2021

Abstract

A graphene-embedded plasmonic rib waveguide (GEPRW) is designed for the mid-infrared electro-optic modulator. The mode characteristics and electro-optic (EO) modulation performances are simulated and optimized by using the finite element method. The results show that propagation length of ${{10}^3}\;{\rm mm}$ and figure of merit of ${{10}^6}$ are obtained by adjusting the bias voltage applied to the GEPRW. The EO wavelength tunings are ${-}{66.69}$ and ${-}{78.87}\;{\rm nm/V}$ for peak ${\rm L}$ and peak ${\rm R}$ in the loss spectra when $w = {3}\;\unicode{x00B5}{\rm m}$ and ${h_1} = {2}\;\unicode{x00B5}{\rm m}$. For a 100 µm long GEPRW, the modulation depths of ${\sim}{96.4},{\sim} {97.1}, {\sim} {93.7}$, and ${\sim} {94.9}\%$, and FWHMs of ${\sim}{30}, {\sim}{74},{\sim}{34}$, and ${\sim}{59}\;{\rm nm}$ can be achieved when $\lambda = {1.55}$, 1.87, 1.89, and 2.23 µm. The EO modulator based on the GEPRW has a wide wavelength tuning range from 1.05 to 2.23 µm. It has high modulation depth, low insertion loss, and broad bandwidth, which can be used as EO tunable devices such as optical interconnects and optical switches.

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Data underlying the results presented in this paper are not publicly available at this time but may be obtained from the authors upon reasonable request.

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$λ_{on}$ (µm)	$M$	ME (dB)	IL (dB)	FWHM (nm)	$Δ V_{g}$ (V)	$E_{F} (O N)$ (eV)	$E_{F} (O F F)$ (eV)
1.55	96.4%	14.4	0.959	30	5.17	0.5	0.2
1.87	97.1%	15.3	0.063	74	2.96	0.4	0.2
1.89	93.7%	12.0	0.930	34	5.17	0.5	0.2
2.23	94.9%	12.9	0.038	59	2.96	0.4	0.2

Structure	ME (dB)	ME (dB/µm)	IL (dB)	Length	$λ o n$ (µm)	f3db (GHz)	$Δ V g$ (V)	Refs.
Graphene-on-silicon slot waveguide	28	0.283	1.28	120 µm	1.55	117	1.91	[10]
Hybrid graphene-silicon structure	$> 22$	$\sim 1.11$	$< 0.23$	20 µm	1.55		11.81	[14]
Localized surface plasmon resonance	5.5		1.9	740 nm	1.55	83.4	2.21	[15]
Graphene hybrid plasmonic waveguide	$\sim 39.75$			3 µm	1.55	190.5	3.13	[16]
Graphene/hBN/graphene photonic crystal fiber		$\sim 42$			1.55		3.92	[18]
Ultrathin silicon strip waveguide		0.297			1.31		3.07	[21]
		0.304			1.55
		0.306			2.00
Plasmonic directional couplers	20.98		4.26	16 µm	1.55			[34]
MZI based metal-oxide-semiconductor technology	3		1.5	1.4 mm	1.55	65	40	[35]
MZI based on InP MQW technology			$< 6.5$	108 mm	1.55	40		[36]
Silicon nitride surface ridge Waveguides	13.8			1.2 cm	1.55	8		[37]
Silicon-based MZI waveguides	5.8		13		1.95			[38]

$λ_{on}$ (µm)	$M$	ME (dB)	IL (dB)	FWHM (nm)	$Δ V_{g}$ (V)	$E_{F} (O N)$ (eV)	$E_{F} (O F F)$ (eV)
1.55	96.4%	14.4	0.959	30	5.17	0.5	0.2
1.87	97.1%	15.3	0.063	74	2.96	0.4	0.2
1.89	93.7%	12.0	0.930	34	5.17	0.5	0.2
2.23	94.9%	12.9	0.038	59	2.96	0.4	0.2

Structure	ME (dB)	ME (dB/µm)	IL (dB)	Length	$λ o n$ (µm)	f3db (GHz)	$Δ V g$ (V)	Refs.
Graphene-on-silicon slot waveguide	28	0.283	1.28	120 µm	1.55	117	1.91	[10]
Hybrid graphene-silicon structure	$> 22$	$\sim 1.11$	$< 0.23$	20 µm	1.55		11.81	[14]
Localized surface plasmon resonance	5.5		1.9	740 nm	1.55	83.4	2.21	[15]
Graphene hybrid plasmonic waveguide	$\sim 39.75$			3 µm	1.55	190.5	3.13	[16]
Graphene/hBN/graphene photonic crystal fiber		$\sim 42$			1.55		3.92	[18]
Ultrathin silicon strip waveguide		0.297			1.31		3.07	[21]
		0.304			1.55
		0.306			2.00
Plasmonic directional couplers	20.98		4.26	16 µm	1.55			[34]
MZI based metal-oxide-semiconductor technology	3		1.5	1.4 mm	1.55	65	40	[35]
MZI based on InP MQW technology			$< 6.5$	108 mm	1.55	40		[36]
Silicon nitride surface ridge Waveguides	13.8			1.2 cm	1.55	8		[37]
Silicon-based MZI waveguides	5.8		13		1.95			[38]

Abstract

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Figures (8)

Tables (2)

Equations (9)

Applied Optics