5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators

Chiara Alessandri; Inge Asselberghs; Steven Brems; Cedric Huyghebaert; Joris Van Campenhout; Dries Van Thourhout; Marianna Pantouvaki

doi:10.1364/AO.383462

Applied Optics
Vol. 59,
Issue 4,
pp. 1156-1162
(2020)
•https://doi.org/10.1364/AO.383462

5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators

Chiara Alessandri, Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout, and Marianna Pantouvaki

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Chiara Alessandri, Inge Asselberghs, Steven Brems, Cedric Huyghebaert, Joris Van Campenhout, Dries Van Thourhout, and Marianna Pantouvaki, "5 × 25 Gbit/s WDM transmitters based on passivated graphene–silicon electro-absorption modulators," Appl. Opt. 59, 1156-1162 (2020)

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- Fiber Optics, Fiber Sensors, and Optical Communications
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About this Article
History
- Original Manuscript: November 18, 2019
- Revised Manuscript: December 27, 2019
- Manuscript Accepted: December 30, 2019
- Published: January 28, 2020

Abstract

Today, one of the key challenges of graphene devices is establishing fabrication processes that can ensure performance stability and repeatability and that can eventually enable production in high volumes. In this paper, we use up-scalable fabrication processes to demonstrate three five-channel wavelength-division multiplexing (WDM) transmitters, each based on five graphene–silicon electro-absorption modulators. A passivation-first approach is used to encapsulate graphene, which results in hysteresis-free and uniform performance across the five channels of each WDM transmitter, for a total of 15 modulators. Open-eye diagrams are obtained at 25 Gb/s using $ 2.5\;{{\rm V}_{{\rm pp}}} $, thus demonstrating potential for multi-channel data transmission at ${5}\times {25}\;{\rm Gb/s}$ on each of the three WDM transmitters.

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	$W_{w g}$ (nm)	$L_{d e v i c e}$ (µm)
WDM1	500	100
WDM2	600	100
WDM3	600	150

	$L_{d e v i c e}$ (µm)	IL (dB)	ER (dB)
WDM1	100	$3.8 \pm 1.0$	$5.5 \pm 0.1$
WDM2	100	$2.9 \pm 0.7$	$5.6 \pm 0.1$
WDM3	150	$4.0 \pm 0.5$	$8.1 \pm 0.7$

				$f_{3 d b}$ (GHz) at 0 V
	$L_{d e v i c e}$ (µm)	$R_{t o t} (Ω)$	$C_{G O S}$ (fF)	Simulated	Measured
WDM1	100	$78 \pm 5$	$112.6 \pm 0.5$	$10.1 \pm 0.5$	$9.5 \pm 0.7$
WDM2	100	$65 \pm 5$	$134.7 \pm 0.5$	$9.5 \pm 0.5$	$9.3 \pm 0.1$
WDM3	150	$49 \pm 5$	$206.6 \pm 0.5$	$7.0 \pm 0.5$	$7.1 \pm 0.3$

	$W_{w g}$ (nm)	$L_{d e v i c e}$ (µm)
WDM1	500	100
WDM2	600	100
WDM3	600	150

	$L_{d e v i c e}$ (µm)	IL (dB)	ER (dB)
WDM1	100	$3.8 \pm 1.0$	$5.5 \pm 0.1$
WDM2	100	$2.9 \pm 0.7$	$5.6 \pm 0.1$
WDM3	150	$4.0 \pm 0.5$	$8.1 \pm 0.7$

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Applied Optics