Abstract

At present, the most common materials for solar-blind UV light detectors are wide band-gap semiconductors, which generally have high requirements and complex methods for preparation. Ordinary semiconductor materials such as silicon, ${\rm{Ti}}{{\rm{O}}_2}$, and ${\rm{C}}{{\rm{u}}_2}{\rm{O}}$ were industrialized, but they were excluded for direct harvest of solar-blind UV light due to their inability to absorb solar-blind light photons. Here, inorganic-organic hybrid film of ${{\rm{Y}}_2}{{\rm{O}}_3}{:}\, {\rm{E}}{{\rm{u}}^{3 +}}\!/{\rm{PMMA}}$ was used as a spectral converter to realize the detection of broadband solar-blind UV light by ordinary semiconductor, converting broadband solar-blind UV luminescence to visible luminescence based on down-conversion process, after which the visible luminescence was detected by the Si photo-resister. The results show that hybrid film based on rare earth luminescence materials is particularly valuable for broadband solar-blind UV detection.

© 2020 Optical Society of America

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