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Microsecond pulse-mode operation of a micro-integrated high-power external-cavity tapered diode laser at 808 nm

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Abstract

We investigate microsecond pulse-mode operation of a micro-integrated high-power diode laser based on volume Bragg grating external-cavity feedback around 808 nm. The laser system contains a tapered amplifier consisting of a ridge-waveguide section and a tapered section with separated electrical contacts. Thus, the diode laser system can be pulsed by modulating the injected current either to the ridge waveguide section (${I_{\rm{RW}}}$) or to the tapered amplifier section (${I_{\rm{TA}}}$). With a trigger signal of a 50 µs pulse width and a 10 kHz repetition rate, comparing the modulation depth, peak output power, beam propagation factor, and spectral bandwidth, we conclude that the pulse-mode operation achieved by modulating the ${I_{\rm{TA}}}$ gives better results than by modulating the ${I_{\rm{RW}}}$ due to the decreased thermal effect. At a constant ${I_{\rm{RW}}}$ of 0.2 A and a modulated ${I_{\rm{TA}}}$ of 6.0 A, 4.3 W of peak output power is obtained with an emission spectral bandwidth with an upper bound of 0.2 nm, and a beam propagation factor in the slow axis, $M_{\rm{slow}}^2$, of 2.6 (${\rm{1/}}{{\rm{e}}^2}$). The modulation depth is almost 100%. The results show that the tapered diode laser system may be a good candidate for microsecond pulse-mode solid-state lasers.

© 2020 Optical Society of America

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