Abstract

A linearity segmentation method for measuring the phase shift curve of silicon Mach–Zehnder modulators (SMZMs) as a function of applied electric field is presented. Applying a small sinusoidal signal to the traveling-wave electrode of the SMZM, the upper and lower arms of the SMZM produce differential phase modulation effect. Meanwhile, a local oscillator source with a wavelength-adjustable function is employed to heterodyne the intensity modulated optical signal of the SMZM; thus, the modulated intensity signal in the optical field domain is transformed into the low-frequency electric field domain. Meanwhile, a balanced detector with a low-speed transimpedance amplifier is exploited to realize photoelectric conversion, which can suppress the direct-current component and improve the anti-noise ability. Extracting the beat-frequency and first-order harmonic sideband signals in the case of phase bias is 0 and $\pi $, respectively, the phase shift slopes of the upper and lower arms can be calculated under different reverse PN voltages, and we can achieve the phase shift as a function of the modulation frequency and reverse PN voltage. The proposed method is supported by the simulation and measurement results and the key parameters of the SMZM, such as the radio frequency half-wave voltage, chirp characteristic, 3 dB bandwidth, etc., can be acquired from the phase shift curves of the upper and lower arms.

© 2020 Optical Society of America

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