Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method

Chen Shen; Xin Tan; Qingbin Jiao; Wei Zhang; Tongtong Wang; Wenhao Li; Na Wu; Xiangdong Qi; H. Bayan

doi:10.1364/AO.57.0000F1

Applied Optics
Vol. 57,
Issue 34,
pp. F1-F7
(2018)
•https://doi.org/10.1364/AO.57.0000F1

Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method

Chen Shen, Xin Tan, Qingbin Jiao, Wei Zhang, Tongtong Wang, Wenhao Li, Na Wu, Xiangdong Qi, and H. Bayan

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Chen Shen, Xin Tan, Qingbin Jiao, Wei Zhang, Tongtong Wang, Wenhao Li, Na Wu, Xiangdong Qi, and H. Bayan, "Study of influence of the removal depth of the silicon modification layer on grating structures in reaction-sintered silicon carbide substrate and improvement method," Appl. Opt. 57, F1-F7 (2018)

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Abstract

The influence of the removal depth of a silicon modification layer on grating structures and mirrors is studied. The removal depth 6–14 μm is the optimization result for Si-modified reaction-sintered silicon carbide (RS-SiC) used as mirror substrates, but the removal depth 9–12 μm is the optimization result for Si-modified RS-SiC used as grating substrates. The diffraction efficiency and stray light of the gratings fabricated in the Si-modified RS-SiC substrates with removal depth 9–12 μm is 90.5%–94% and $5.30 \times 10^{- 7} - 5.45 \times 10^{- 7}$ , respectively. Additionally, the number and scale of high-reflection points can be used as the basis for judging the removal depth of the Si-modified RS-SiC used as grating substrates. These results and the regularity have guiding significance for the application of Si-modified RS-SiC as a microstructural substrate.

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Power (W)	Voltage (V)	Current (A)	Ar (sccm)	Stress (Pa)	Presputtering Time (s)	Sputtering Time(s)
200	433	0.46	19.2	$2.8 \times 10^{- 3}$	120	380

Parameter Name	Density (gr/mm)	Groove Depth (nm)	Duty Cycle (%)	Sidewall Angle (°)	Roughness (nm, Rq)	Roughness (nm, Ra)
Groove profile parameters	2056	$170 \pm 10$	$40 \pm 2$	$74 \pm 1$	$< 1.5$	$< 1.5$

Measuring Instrument
Step Profiler		Optical Microscope		AFM		Interferometer ( $190 mm \times 160 mm @ 632.8 nm$ )
Removal Depth (μm)	Residual Depth (μm)	Number of High-Reflection Points (/ ${mm}^{2}$ )	Scale of High-Reflection Points ( ${μm}^{2}$ )	Roughness (nm, Rq)	Roughness (nm, Ra)	PV	RMS
0	18.5	very many	$> 8 \times 8$	$9.77 \pm 0.20$	$9.37 \pm 0.17$	$0.477 λ$	$0.079 λ$
3.155	15.343	$> 900$	$> 8 \times 8$	$1.17 \pm 0.05$	$0.99 \pm 0.05$	$0.171 λ$	$0.021 λ$
6.233	11.265	50–150	$\sim 0.5 \times 0.5 - 8 \times 8$	$0.55 \pm 0.07$	$0.41 \pm 0.04$	$0.176 λ$	$0.021 λ$
9.275	9.828	$< 20$	$\sim 0.5 \times 0.5 - 1 \times 1$	$0.47 \pm 0.04$	$0.43 \pm 0.05$	$0.186 λ$	$0.024 λ$
11.947	6.551	$< 20$	$\sim 0.5 \times 0.5 - 1 \times 1$	$0.61 \pm 0.04$	$0.51 \pm 0.04$	$0.179 λ$	$0.019 λ$
14.022	4.476	50–150	$\sim 0.5 \times 0.5 - 8 \times 8$	$0.61 \pm 0.05$	$0.55 \pm 0.04$	$0.183 λ$	$0.027 λ$
17.109	1.389	$> 900$	$> 8 \times 8$	$1.04 \pm 0.05$	$0.92 \pm 0.05$	$0.172 λ$	$0.018 λ$

	Removal Depth (μm)	Groove Depth (nm)	Duty Cycle (%)	Sidewall Angle (°)	Roughness (nm, Rq)	Roughness (nm, Ra)
Substrates	Design	$170 \pm 10$	$40 \pm 2$	$74 \pm 1$	$< 1.5$	$< 1.5$
Modified SiC with Si-modified layer thickness 18.5 μm	3.155	$147.8 \pm 0.4$	$40.1 \pm 1.4$	$74.28 \pm 0.52$	$16.21 \pm 0.06$	$16.38 \pm 0.09$
	6.233	$171.5 \pm 0.3$	$40.4 \pm 1.2$	$73.94 \pm 0.46$	$4.39 \pm 0.06$	$4.25 \pm 0.04$
	9.275	$172.2 \pm 0.4$	$40.5 \pm 1.3$	$74.71 \pm 0.56$	$0.39 \pm 0.04$	$0.37 \pm 0.06$
	11.947	$171.8 \pm 0.3$	$40.9 \pm 1.3$	$74.21 \pm 0.60$	$0.43 \pm 0.04$	$0.39 \pm 0.07$
	14.022	$169.6 \pm 0.3$	$40.1 \pm 1.2$	$73.87 \pm 0.42$	$4.37 \pm 0.06$	$4.27 \pm 0.04$
	17.109	$148.2 \pm 0.4$	$40.7 \pm 1.4$	$73.08 \pm 0.59$	$17.45 \pm 0.10$	$17.34 \pm 0.09$

Substrate	Removal Depth (μm)	Mean	Standard Deviation	Minimum	Median	Maximum
Modified RS-SiC grating	3.155	$4.671 \times 10^{- 3}$	$1.48922 \times 10^{- 4}$	$4.36 \times 10^{- 3}$	$4.68 \times 10^{- 3}$	$4.98 \times 10^{- 3}$
	6.233	$2.8065 \times 10^{- 5}$	$1.35929 \times 10^{- 6}$	$2.46 \times 10^{- 5}$	$2.74 \times 10^{- 5}$	$2.91 \times 10^{- 5}$
	9.275	$5.3265 \times 10^{- 7}$	$1.05929 \times 10^{- 7}$	$3.46 \times 10^{- 7}$	$2.74 \times 10^{- 7}$	$7.31 \times 10^{- 7}$
	11.947	$5.4195 \times 10^{- 7}$	$1.02543 \times 10^{- 7}$	$3.4 \times 10^{- 7}$	$5.3 \times 10^{- 7}$	$6.92 \times 10^{- 7}$
	14.022	$3.1744 \times 10^{- 5}$	$1.12876 \times 10^{- 6}$	$2.55 \times 10^{- 5}$	$2.92 \times 10^{- 5}$	$3.491 \times 10^{- 5}$
	17.109	$6.79 \times 10^{- 3}$	$1.10401 \times 10^{- 4}$	$6.69 \times 10^{- 3}$	$6.85 \times 10^{- 3}$	$7.31 \times 10^{- 3}$
Modified RS-SiC mrror	3.155	$9.679 \times 10^{- 7}$	$4.55792 \times 10^{- 8}$	$8.8 \times 10^{- 7}$	$9.675 \times 10^{- 7}$	$1.08 \times 10^{- 6}$
	6.233	$5.2195 \times 10^{- 7}$	$1.02543 \times 10^{- 7}$	$3.4 \times 10^{- 7}$	$5.3 \times 10^{- 7}$	$7.3 \times 10^{- 7}$
	9.275	$4.99 \times 10^{- 7}$	$1.10401 \times 10^{- 7}$	$3.2 \times 10^{- 7}$	$4.85 \times 10^{- 7}$	$7.1 \times 10^{- 7}$
	11.947	$5.67 \times 10^{- 7}$	$7.90137 \times 10^{- 8}$	$4.2 \times 10^{- 7}$	$5.7 \times 10^{- 7}$	$6.9 \times 10^{- 7}$
	14.022	$5.4495 \times 10^{- 7}$	$1.55464 \times 10^{- 7}$	$3.5 \times 10^{- 7}$	$4.9 \times 10^{- 7}$	$7.9 \times 10^{- 7}$
	17.109	$1.0162 \times 10^{- 6}$	$5.4288 \times 10^{- 8}$	$9.13 \times 10^{- 7}$	$1.009 \times 10^{- 6}$	$1.153 \times 10^{- 6}$

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Applied Optics