Abstract

Plasmonics as a new field of chip-scale technology is the interesting substrate of this study to propose and numerically investigate a metal/insulator/semiconductor/metal (MISM)-structure $2\times 2$ plasmonic routing switch. As a planar subwavelength arrangement, the presented design has two npn-doped side-coupled dual waveguides whose duty is to route the propagating surface plasmon polaritons through the device. Relying on the MISM structure, which has a MOS-like thin-film arrangement of typically 45 nm doped silicon covered by a layer of 8 nm thick ${\mathrm{HfO}}_2$ gate insulator, the routing configuration is electrically addressed based on the carrier-induced plasma dispersion effects as an external electro-plasmonic switching control. Finite-element-method-conducted electromagnetic simulations are employed to evaluate the switch optical response at telecom wavelength of $\lambda =1550\mathrm{nm}$, due to which the balanced operation measure of extinction ratios larger than 10 dB and insertion losses of around $-1.8\mathrm{dB}$ are obtained for both channels of CROSS and STRAIGHT. Compared with other photonic and plasmonic switching counterparts, this configuration, besides its potential for CMOS compatibility, can be utilized as a high-speed compact building block to sustain higher-speed, more miniaturized, and less consuming electro-optic routing/switching protocols toward complicated optical integrated circuits and systems.

© 2016 Optical Society of America

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