Multi-type particle layer improved light trapping for photovoltaic applications

Christin David

doi:10.1364/AO.55.007980

Applied Optics
Vol. 55,
Issue 28,
pp. 7980-7986
(2016)
•https://doi.org/10.1364/AO.55.007980

Multi-type particle layer improved light trapping for photovoltaic applications

Christin David

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Christin David, "Multi-type particle layer improved light trapping for photovoltaic applications," Appl. Opt. 55, 7980-7986 (2016)

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Abstract

This work discusses regular particle arrays as nanostructured front layers for possible application in photovoltaic devices yielding strongly increased forward scattering. I used a rigorous plane-wave method to investigate multi-type particle layers combining different radii and configurations. The absorbance was enhanced compared to the bare Si wafer and I demonstrated on mixing particles a broadband boost in the absorbance within the homogeneous wafer region, excluding parasitic absorption in the particle layer. I studied the efficiency enhancement for varying geometries. Multi-type layers made of Si disks with two different radii achieved up to 33% (24%) and with four different radii up to 40% (30%) improvement in the short circuit current and integrated absorbance, respectively, without yet standard anti-reflection coatings. Broadband efficiency enhancement for metal multi-type layers was not observed because they show strong parasitic absorption and boost the absorbance only in narrow wavelength regions.

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Si $r_{2}$	Si $r_{1}$	$h$	$η_{I_{sc}}$	$η_{A_{av}}$	Si $r_{1}$	$η_{I_{sc}}$	$η_{A_{av}}$
5	25	100	13%	9%	10	5%	4%
15	25	100	16%	11%	10	8%	7%
25	25	100	23%	15%	10	14%	10%
35	25	100	29%	19%	10	22%	17%
45	25	20	5%	3%	10	4%	3%
45	25	40	17%	14%	10	15%	13%
45	25	60	28%	22%	10	26%	22%
45	25	80	33%	24%	10	32%	23%
45	25	100	32%	22%	10	31%	22%

Si $r_{2}$	Ag $r_{1}$	$h$	$η_{I_{sc}}$	$η_{A_{av}}$
5 nm	25 nm	100 nm	−12%	−15%
15 nm	25 nm	100 nm	−12%	−15%
25 nm	25 nm	20 nm	−9%	−11%
25 nm	25 nm	40 nm	−9%	−11%
25 nm	25 nm	60 nm	−8%	−12%
25 nm	25 nm	80 nm	−6%	−12%
25 nm	25 nm	100 nm	−6%	−16%
35 nm	25 nm	100 nm	+1%	−8%
45 nm	25 nm	100 nm	+11%	+1%
Ag $r_{2}$	Ag $r_{1}$	$h$	$η_{I_{sc}}$	$η_{A_{av}}$
25 nm	25 nm	100 nm	−29%	−29%
Ag $r_{2}$	Ag $r_{1}$	$h$	$η_{I_{sc}} (A)$	$η_{A_{av}} (A)$
25 nm	25 nm	100 nm	+3%	+11%

Si $r_{2}$	Si $r_{1}$	$h$	$η_{I_{sc}}$	$η_{A_{av}}$	Si $r_{1}$	$η_{I_{sc}}$	$η_{A_{av}}$
5	25	100	13%	9%	10	5%	4%
15	25	100	16%	11%	10	8%	7%
25	25	100	23%	15%	10	14%	10%
35	25	100	29%	19%	10	22%	17%
45	25	20	5%	3%	10	4%	3%
45	25	40	17%	14%	10	15%	13%
45	25	60	28%	22%	10	26%	22%
45	25	80	33%	24%	10	32%	23%
45	25	100	32%	22%	10	31%	22%

Si $r_{2}$	Ag $r_{1}$	$h$	$η_{I_{sc}}$	$η_{A_{av}}$
5 nm	25 nm	100 nm	−12%	−15%
15 nm	25 nm	100 nm	−12%	−15%
25 nm	25 nm	20 nm	−9%	−11%
25 nm	25 nm	40 nm	−9%	−11%
25 nm	25 nm	60 nm	−8%	−12%
25 nm	25 nm	80 nm	−6%	−12%
25 nm	25 nm	100 nm	−6%	−16%
35 nm	25 nm	100 nm	+1%	−8%
45 nm	25 nm	100 nm	+11%	+1%
Ag $r_{2}$	Ag $r_{1}$	$h$	$η_{I_{sc}}$	$η_{A_{av}}$
25 nm	25 nm	100 nm	−29%	−29%
Ag $r_{2}$	Ag $r_{1}$	$h$	$η_{I_{sc}} (A)$	$η_{A_{av}} (A)$
25 nm	25 nm	100 nm	+3%	+11%

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Equations (4)

Applied Optics