Passive Q-switching of a Tm,Ho:KLu(WO<sub>4</sub>)<sub>2</sub> microchip laser by a Cr:ZnS saturable absorber

J. M. Serres; P. Loiko; X. Mateos; V. Jambunathan; A. S. Yasukevich; K. V. Yumashev; V. Petrov; U. Griebner; M. Aguiló; F. Díaz

doi:10.1364/AO.55.003757

Passive Q-switching of a Tm,Ho:KLu(WO₄)₂ microchip laser by a Cr:ZnS saturable absorber

J. M. Serres, P. Loiko, X. Mateos, V. Jambunathan, A. S. Yasukevich, K. V. Yumashev, V. Petrov, U. Griebner, M. Aguiló, and F. Díaz

Applied Optics
Vol. 55,
Issue 14,
pp. 3757-3763
(2016)
•https://doi.org/10.1364/AO.55.003757

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J. M. Serres, P. Loiko, X. Mateos, V. Jambunathan, A. S. Yasukevich, K. V. Yumashev, V. Petrov, U. Griebner, M. Aguiló, and F. Díaz, "Passive Q-switching of a Tm,Ho:KLu(WO₄)₂ microchip laser by a Cr:ZnS saturable absorber," Appl. Opt. 55, 3757-3763 (2016)

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Related Topics
Table of Contents Category
- Lasers and Laser Optics
Optics & Photonics Topics
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The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Infrared and far-infrared lasers (140.3070)
- Laser materials (140.3380)
- Lasers, Q-switched (140.3540)

About this Article
History
- Original Manuscript: March 4, 2016
- Revised Manuscript: April 6, 2016
- Manuscript Accepted: April 6, 2016
- Published: May 3, 2016

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Abstract

A diode-pumped $Tm, Ho : KLu {({WO}_{4})}_{2}$ microchip laser passively $Q$ -switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a $Q$ -switching conversion efficiency of 58%. The pulse characteristics were $14 ns / 9 μJ$ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, $9 ns / 10.4 μJ / 8.2 kHz$ pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively $Q$ -switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results.

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Parameter	Notation	Value
AM: Tm,Ho:KLuW ^b
Absorption cross section	$σ_{abs}^{g}$	$0.7 \times 10^{- 20} {cm}^{2}$
Stimulated-emission cross section	$σ_{SE}^{g}$	$2.4 \times 10^{- 20} {cm}^{2}$
Lifetime of ${Ho}^{3 +} ions / {Tm}^{3 +} - {Ho}^{3 +}$ pair	$τ_{Ho} ({{}^{5}I}_{7}) / τ_{Tm - Ho}$	$4.8 ms / 2.1 ms$
Refractive index	$n_{AM}$	1.9852
$SA : {Cr}^{2 +} : ZnS$
Ground/excited-state absorption cross section	$σ_{g s} / σ_{e s}$	$0.1 \times 10^{- 18} {cm}^{2} / \approx 0$
Saturation fluence	$F_{S} = h ν_{l} / σ_{g s}$	$1.07 J / {cm}^{2}$
Recovery time	$τ (^{5} E)$	5 μs
Nonsaturable loss		7.5%
Refractive index	$n_{SA}$	2.2647

Crystal, Tm,Ho:	SA	$P_{out}$ , mW	$Δ t$ , Ns	PRF, kHz	$E_{out}$ , μJ	$P_{peak}$ , kW	$T$ , K	Ref.
KLuW	A	85	9	8.2	10.4	1.15	287	This work
	A	131	14	14.5	9	0.65	287	This work
KLuW	B	74	200	340	0.2	0.001	285	[19]
${LiYF}_{4}$	A	10	1250	2.6	4	0.003	283	[20]
${LiLuF}_{4}$	A	68	1200	5.2	13	0.01	283	[21]
${YAlO}_{3}$	C	660	135	245	2.7	0.02	285	[23]

Parameter	Notation	Value
AM: Tm,Ho:KLuW ^b
Absorption cross section	$σ_{abs}^{g}$	$0.7 \times 10^{- 20} {cm}^{2}$
Stimulated-emission cross section	$σ_{SE}^{g}$	$2.4 \times 10^{- 20} {cm}^{2}$
Lifetime of ${Ho}^{3 +} ions / {Tm}^{3 +} - {Ho}^{3 +}$ pair	$τ_{Ho} ({{}^{5}I}_{7}) / τ_{Tm - Ho}$	$4.8 ms / 2.1 ms$
Refractive index	$n_{AM}$	1.9852
$SA : {Cr}^{2 +} : ZnS$
Ground/excited-state absorption cross section	$σ_{g s} / σ_{e s}$	$0.1 \times 10^{- 18} {cm}^{2} / \approx 0$
Saturation fluence	$F_{S} = h ν_{l} / σ_{g s}$	$1.07 J / {cm}^{2}$
Recovery time	$τ (^{5} E)$	5 μs
Nonsaturable loss		7.5%
Refractive index	$n_{SA}$	2.2647

Crystal, Tm,Ho:	SA	$P_{out}$ , mW	$Δ t$ , Ns	PRF, kHz	$E_{out}$ , μJ	$P_{peak}$ , kW	$T$ , K	Ref.
KLuW	A	85	9	8.2	10.4	1.15	287	This work
	A	131	14	14.5	9	0.65	287	This work
KLuW	B	74	200	340	0.2	0.001	285	[19]
${LiYF}_{4}$	A	10	1250	2.6	4	0.003	283	[20]
${LiLuF}_{4}$	A	68	1200	5.2	13	0.01	283	[21]
${YAlO}_{3}$	C	660	135	245	2.7	0.02	285	[23]

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