Abstract

Cu-Sn-S (CTS) thin films were deposited onto bare and molybdenum (Mo) coated glass substrates by means of the spray pyrolysis technique under different conditions. The CTS thin films obtained are shown, by means of Raman spectroscopy, to consist of two main phases: ${\mathrm{Cu}}_2{\mathrm{SnS}}_3$ and ${\mathrm{Cu}}_3{\mathrm{SnS}}_4$ as well as of the secondary phase of ${\mathrm{Cu}}_{2-x}\mathrm{S}$. The electrical conductivity of the spray-deposited p-type CTS thin films under investigation is determined by two shallow acceptor levels: $\mathrm{Ev}+0.07\mathrm{eV}$ at $T<334\mathrm{K}$ and $\mathrm{Ev}+0.1\mathrm{eV}$ at $T>334\mathrm{K}$. The material of the CTS thin films was established to be a direct-band semiconductor with the bandgap $E_g=1.89\mathrm{eV}$. The SEM and x-ray energy dispersive analysis show the surface and cross section of the CTS thin film deposited onto molybdenum-coated glass ceramics substrate with the actual atomic ratios of Cu:Sn:S being 2.9:1:2.64, which is in good agreement with the Raman spectra. Also, a small content of residual Cl atoms was found in the CTS thin films under investigation as the by-product of the pyrolytic reactions.

© 2016 Optical Society of America

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