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Current–voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs

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Abstract

In this paper, the emission of visible light by a monolithically integrated silicon pn junction under reverse-bias is discussed. The modulation of light intensity is achieved using an insulated-gate terminal on the surface of the pn junction. By varying the gate voltage, the breakdown voltage of the pn junction will be adjustable so that the reverse current Isub flowing through the pn junction at a fixed reverse-bias voltage is changed. It is observed that the light, which is emitted from the defects located at the pn junction, depends closely on the reverse current Isub. In regard to the phenomenon of electroluminescence, the relationship between the optical emission power and the reverse current Isub is linear. On the other hand, it is observed that both the quantum efficiency and the power conversion efficiency are able to have obvious enhancement, although the reverse-bias of the pn junction is reduced and the corresponding reverse-current is much lower. Moreover, the successful fabrication on monolithic silicon light source on the bulk silicon by means of standard silicon complementary metal–oxide–semiconductor process technology is presented.

© 2013 Optical Society of America

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