Abstract

A low-cost pulsed ${\text{N}}_2$-laser has been used to successfully demonstrate the formation of self-organized conical microtexture in Si. The process is demonstrated in vacuum environment to avoid the use of ${\mathrm{SF}}_6$ gas and sulfur incorporation. The microtexture is formed with an average structure height of $\sim 15\mathrm{um}$, base diameter $\sim 10\mu \text{m}$, and tip-to-tip separation $\sim 8\mu \text{m}$. Energy dispersive x-ray spectroscopy of individual conelike structure shows that the material remains free from impurity incorporation. We have shown that the laser-induced-damage-related absorption can be successfully restored after an hour annealing at 1000 °C, making the material an ideal candidate for photovoltaic and other photonic applications.

©2012 Optical Society of America

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