Abstract

We report on the fabrication of the planar waveguides in ${\mathrm{Bi}}_4{\mathrm{Ge}}_3{\mathrm{O}}_{12}$ crystal by using 17 MeV ${\mathrm{C}}^{5+}$ or ${\mathrm{O}}^{5+}$ ions at a fluence of $2\times {10}^{14}\mathrm{ions}/{\mathrm{cm}}^2$. The reconstructed refractive index profiles of the waveguides produced by either ${\mathrm{C}}^{5+}$ or ${\mathrm{O}}^{5+}$ irradiation are the “well” $+$ “barrier” pattern distribution. The two-dimensional modal profiles of the planar waveguides, measured by using the end-coupling arrangement, are in good agreement with the simulated modal distributions. After thermal annealing treatment at 260 °C for 30 min, the propagation loss for ${\mathrm{C}}^{5+}$ and ${\mathrm{O}}^{5+}$ irradiated waveguides could be reduced down to $\sim 1.1$ and $\sim 4.8\mathrm{dB}/\mathrm{cm}$, respectively, which exhibit acceptable guiding qualities for potential applications in integrated optics.

©2011 Optical Society of America

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