Abstract

Indium tin oxide (ITO) thin films doped with a volume ratio of 0.3% Ag were prepared by sputtering and subsequently annealed in temperatures of 200, 260, 300, 360, and $400°\mathrm{C}$. The annealed films show increased transmittance in the visible wavelength range. The refractive index n and extinction coefficient k were extracted from simulating the transmittance spectra by using spectroscopic ellipsometry analysis method. The n values apparently increased in the whole wavelength range, but the k values were found to have almost no change in the near ultraviolet region after Ag doping. It is, therefore, proposed that the ITO:Ag combined with an ITO multilayer structure can be applied in special optical devices.

© 2009 Optical Society of America

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